STW34NM60N

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STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 29 A, 600 V, 0.092 OHM, 10 V, 3 V ROHS COMPLIANT: YES

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DocumentsProduct Change Notice EN TN1225 +17

STW34NM60N

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STMicroelectronics

MOSFET TRANSISTOR, N CHANNEL, 29 A, 600 V, 0.092 OHM, 10 V, 3 V ROHS COMPLIANT: YES

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DocumentsProduct Change Notice EN TN1225 +17

Specifications Pricing Series Description Documents

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 5.80
Digikey	Tube	1	$ 10.19
		30	$ 8.13
		120	$ 7.28
		510	$ 6.42
		1020	$ 5.78
Newark	Each	1	$ 10.71
		10	$ 9.23
		25	$ 7.70
		60	$ 7.26
		120	$ 6.50
		270	$ 5.54

Description

General part information

STW34 Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Documents

Technical documentation and resources

Specification	STW34NM60N	STW34 Series

Current - Continuous Drain (Id) @ 25°C	29 A	28 - 29 A
Drain to Source Voltage (Vdss)	600 V	600 - 650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC	62.5 - 80 nC
Input Capacitance (Ciss) (Max) @ Vds	2722 pF	2700 - 2722 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max) [Max]	250 W	190 - 250 W
Rds On (Max) @ Id, Vgs	-	110 mOhm
Rds On (Max) @ Id, Vgs [Max]	105 mOhm	105 mOhm
Supplier Device Package	TO-247-3	TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	25 V	25 V
Vgs(th) (Max) @ Id	4 V	4 - 5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]
STMicroelectronics STW34N65M5	10 V	MOSFET (Metal Oxide)	25 V	N-Channel	TO-247-3	28 A	Through Hole	TO-247-3	5 V	650 V	110 mOhm	62.5 nC	150 °C	190 W	2700 pF
STMicroelectronics STW34NM60N	10 V	MOSFET (Metal Oxide)	25 V	N-Channel	TO-247-3	29 A	Through Hole	TO-247-3	4 V	600 V		80 nC	150 °C	250 W	2722 pF	105 mOhm

STW34NM60N

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STW34NM60N

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Pricing

Description

STW34 Series

Documents

Product Change Notice EN

TN1225

AN2344

AN4337

TN1378

AN2842

TN1224

DS10961

UM1575

TN1156

AN4250

Datasheet

Technical Specifications

STW34 Series