STW34N65M5

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STMicroelectronics

TRANS MOSFET N-CH SI 650V 28A 3-PIN(3+TAB) TO-247 TUBE

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STMicroelectronics

TRANS MOSFET N-CH SI 650V 28A 3-PIN(3+TAB) TO-247 TUBE

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STW34N65M5	STW34 Series

Current - Continuous Drain (Id) @ 25°C	28 A	28 - 29 A
Drain to Source Voltage (Vdss)	650 V	600 - 650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	62.5 nC	62.5 - 80 nC
Input Capacitance (Ciss) (Max) @ Vds	2700 pF	2700 - 2722 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max) [Max]	190 W	190 - 250 W
Rds On (Max) @ Id, Vgs	110 mOhm	110 mOhm
Rds On (Max) @ Id, Vgs	-	105 mOhm
Supplier Device Package	TO-247-3	TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	25 V	25 V
Vgs(th) (Max) @ Id	5 V	4 - 5 V

TRANS MOSFET N-CH SI 650V 28A 3-PIN(3+TAB) TO-247 TUBE

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]
STMicroelectronics STW34N65M5	10 V	MOSFET (Metal Oxide)	25 V	N-Channel	TO-247-3	28 A	Through Hole	TO-247-3	5 V	650 V	110 mOhm	62.5 nC	150 °C	190 W	2700 pF
STMicroelectronics STW34NM60N	10 V	MOSFET (Metal Oxide)	25 V	N-Channel	TO-247-3	29 A	Through Hole	TO-247-3	4 V	600 V		80 nC	150 °C	250 W	2722 pF	105 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 28A (Tc) 190W (Tc) Through Hole TO-247-3

Technical documentation and resources