| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTW27N | FETs, MOSFETs | 1 | 8 | |
STMicroelectronicsSTW27N60M2-EPN-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-247 package | Power MOSFETs | 3 | 1 | These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and an improved vertical structure, these devices exhibit low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters. |
STMicroelectronicsSTW28N | FETs, MOSFETs | 1 | 8 | |
STMicroelectronicsSTW28N60DM2N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in TO-247 package | Power transistors | 2 | 1 | These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STMicroelectronicsSTW28N60M2N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-247 package | Discretes | 3 | 1 | These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTW28N65M2N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package | Power transistors | 3 | 1 | These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTW28NM50NN-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in TO-247 package | Power transistors | 3 | 1 | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTW30N | Discrete Semiconductor Products | 5 | 8 | |
STMicroelectronicsSTW30N65M5N-channel 650 V, 0.125 Ohm typ., 22 A MDmesh M5 Power MOSFET in TO-247 package | Discretes | 3 | 1 | These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power... Read More |
STMicroelectronicsSTW30N80K5N-channel 800 V, 0.15 Ohm typ., 24 A MDmesh K5 Power MOSFET in a TO-247 package | Single MOSFETs | 3 | 1 | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |