| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTW35N | Discrete Semiconductor Products | 1 | 8 | |
STMicroelectronicsSTW35N60DM2N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package | Power transistors | 3 | 1 | This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STMicroelectronicsSTW35N65DM2N-channel 650 V, 93 mOhm typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 package | STPOWER N-channel MOSFETs > 200 V to 700 V | 1 | 1 | This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STMicroelectronicsSTW36 | Transistors | 1 | 8 | |
STMicroelectronicsSTW36N60M6N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-247 package | Semiconductors - Discretes | 2 | 1 | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)* area improvement with one of the most effective switching behaviors available, as... Read More |
STMicroelectronicsSTW37 | Single FETs, MOSFETs | 2 | 1 | |
STMicroelectronicsSTW38N | Single | 1 | 8 | |
STMicroelectronicsSTW38N65M5N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in TO-247 package | Semiconductors - Discretes | 3 | 1 | These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power... Read More |
STMicroelectronicsSTW3N150N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH power MOSFET in TO-247 package | Power transistors | 2 | 1 | These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. |
STMicroelectronicsSTW3N170N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MOSFET in TO-247 package | Power MOSFETs | 2 | 1 | This Power MOSFET is designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. |