STW35N60DM2 Series

N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package

Catalog

N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package

Part	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id
STMicroelectronics STW35N60DM2	110 mOhm	TO-247-3	2400 pF	10 V	210 W	Through Hole	28 A	25 V	-55 °C	150 °C	TO-247-3	MOSFET (Metal Oxide)	54 nC	600 V	N-Channel	5 V

Catalog

N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package

Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.