STW35N60DM2

Active

STMicroelectronics

N-CHANNEL 600 V, 0.094 OHM TYP., 28 A MDMESH DM2 POWER MOSFETS IN TO-247 PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Technical Data Sheet EN +1

STW35N60DM2

Active

STMicroelectronics

N-CHANNEL 600 V, 0.094 OHM TYP., 28 A MDMESH DM2 POWER MOSFETS IN TO-247 PACKAGE

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW35N60DM2

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	210 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STW35 Series

N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package

Part	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id
STMicroelectronics STW35N60DM2	110 mOhm	TO-247-3	2400 pF	10 V	210 W	Through Hole	28 A	25 V	-55 °C	150 °C	TO-247-3	MOSFET (Metal Oxide)	54 nC	600 V	N-Channel	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 5.03
		90	$ 4.50
		300	$ 4.24
		750	$ 3.97
		1500	$ 3.57
Newark	Each	1	$ 7.88
		10	$ 7.01
		25	$ 5.48
		50	$ 5.23
		100	$ 5.03

Description

General part information

STW35 Series

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources

Datasheet

Technical Data Sheet EN

Datasheet

Product Change Notice EN

Datasheet