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STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTW40N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 package | Single | 10 | 1 | These very high voltage N-channel Power MOSFETs are part of the MDmesh DK5 fast-recovery diode series. The MDmesh DK5 combines very low recovery charge (Qrr) and recovery time (trr) with an excellent improvement in RDS(on)* area and one of the most effective switching behaviors, ideal for half bridge and full... Read More |
STMicroelectronicsSTW40N | Discrete Semiconductor Products | 1 | 8 | |
STMicroelectronicsSTW40N60M2N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-247 package | Power transistors | 4 | 1 | These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTW40N65M2N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220 package | MDmesh M2 series | 3 | 1 | This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTW40N90K5N-channel 900 V, 0.088 Ohm typ., 40 A MDmesh K5 Power MOSFET in a TO-247 package | STPOWER N-channel MOSFETs > 700 V | 3 | 1 | These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTW40N95DK5N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 package | Transistors | 2 | 1 | These very high voltage N-channel Power MOSFETs are part of the MDmesh DK5 fast-recovery diode series. The MDmesh DK5 combines very low recovery charge (Qrr) and recovery time (trr) with an excellent improvement in RDS(on)* area and one of the most effective switching behaviors, ideal for half bridge and full... Read More |
STMicroelectronicsSTW40N95K5N-channel 950 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOSFET in a TO-247 package | Discretes | 3 | 1 | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTW42N-channel 650 V, 70 mOhm typ., 33 A MDmesh M5 Power MOSFET in a TO-247 package | Power MOSFETs | 2 | 1 | MDmesh V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density... Read More |
STMicroelectronicsSTW42N60M2-EPN-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-247 package | Semiconductors - Discretes | 2 | 1 | These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters. |
STMicroelectronicsSTW42N65M5N-channel 650 V, 70 mOhm typ., 33 A MDmesh M5 Power MOSFET in a TO-247 package | Power MOSFETs | 2 | 1 | MDmesh V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density... Read More |