STW40 Series

N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 package

Catalog

N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 package

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature
STMicroelectronics STW40N95DK5	TO-247-3	3480 pF	130 mOhm	TO-247	450 W	5 V	38 A	-55 °C	150 °C	Through Hole	100 nC	N-Channel	10 V	950 V	30 V	MOSFET (Metal Oxide)
STMicroelectronics STW40N60M2	TO-247-3		88 mOhm	TO-247-3		4 V	34 A	-55 °C	150 °C	Through Hole		N-Channel	10 V	600 V	25 V	MOSFET (Metal Oxide)	250 W	57 nC	2500 pF
STMicroelectronics STW40N65M2	TO-247-3	2355 pF	99 mOhm	TO-247-3		4 V	32 A			Through Hole	56.5 nC	N-Channel	10 V	650 V	25 V	MOSFET (Metal Oxide)	250 W			150 °C
STMicroelectronics STW40NF20	TO-247-3	2500 pF	45 mOhm	TO-247-3		4 V		-55 °C	150 °C	Through Hole	75 nC	N-Channel	10 V	200 V	20 V	MOSFET (Metal Oxide)

Catalog

N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 package

Description

These very high voltage N-channel Power MOSFETs are part of the MDmesh DK5 fast-recovery diode series. The MDmesh DK5 combines very low recovery charge (Qrr) and recovery time (trr) with an excellent improvement in RDS(on)* area and one of the most effective switching behaviors, ideal for half bridge and full bridge converters.