STW40N60M2

Active

STMicroelectronics

N-CHANNEL 600 V, 0.078 OHM TYP., 34 A MDMESH M2 POWER MOSFET IN TO-247 PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsProduct Change Notice EN Datasheet +26

STW40N60M2

Active

STMicroelectronics

N-CHANNEL 600 V, 0.078 OHM TYP., 34 A MDMESH M2 POWER MOSFET IN TO-247 PACKAGE

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet +26

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW40N60M2

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	88 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

STW40N60M2 Series

N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-247 package

Part	Power Dissipation (Max) [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Technology	Rds On (Max) @ Id, Vgs
STMicroelectronics STW40N60M2	250 W	TO-247-3	-55 °C	150 °C	10 V	57 nC	N-Channel	600 V	4 V	25 V	34 A	Through Hole	2500 pF	TO-247-3	MOSFET (Metal Oxide)	88 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 3.05
		30	$ 2.92
		120	$ 2.80
		510	$ 2.69
Digikey	Tube	1	$ 8.18
		10	$ 5.57
		100	$ 4.09
		500	$ 3.50
Newark	Each	1	$ 7.65
		10	$ 5.89
		25	$ 4.21
		50	$ 4.08
		100	$ 3.96
		250	$ 3.87

Description

General part information

STW40N60M2 Series

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

STW40N60M2

Deep-Dive with AI

STW40N60M2

Deep-Dive with AI

Technical Specifications

STW40N60M2 Series

Pricing

Description

STW40N60M2 Series

Documents

Product Change Notice EN

Datasheet

AN4250

AN4829

AN2842

AN4406

TN1378

AN4337

TN1225

AN2344

TN1156

AN5318

DS9801

TN1224

AN4742

UM1575

AN4720

Technical Specifications

STW40N60M2 Series