STW40N65M2 Series

N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220 package

Catalog

N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220 package

Part	Supplier Device Package	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Operating Temperature
STMicroelectronics STW40N65M2	TO-247-3	TO-247-3	25 V	2355 pF	99 mOhm	650 V	Through Hole	MOSFET (Metal Oxide)	N-Channel	10 V	250 W	32 A	56.5 nC	4 V	150 °C

Catalog

N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220 package

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.