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STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTW24N60M6N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a TO-247 package | MDmesh M6 series | 2 | 1 | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as... Read More |
STMicroelectronicsSTW25N | Discrete Semiconductor Products | 3 | 8 | |
STMicroelectronicsSTW25N60M2-EPN-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-247 package | Single MOSFETs | 2 | 1 | This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. |
STMicroelectronicsSTW25N80K5N-channel 800 V, 0.190 Ohm typ., 19.5 A MDmesh K5 Power MOSFET in a TO-247 package | Semiconductors - Discretes | 2 | 1 | These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTW26N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh II Power MOSFET in a TO-247 package | MDmesh M2 series | 7 | 1 | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTW26N | Single | 2 | 8 | |
STMicroelectronicsSTW26N60M2N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-247 package | MDmesh M2 series | 3 | 1 | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTW26N65DM2N-channel 650 V, 0.156 Ohm typ., 20 A MDmesh DM2 Power MOSFET in a TO-247 package | Power transistors | 2 | 1 | This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STMicroelectronicsSTW26NM50N-channel 500 V, 100 mOhm typ., 26 A MDmesh Power MOSFET in a TO-247 package | Power transistors | 2 | 1 | MDmesh technology applies the benefits of the multiple drain process to STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product offers low onresistance, high dv/dt capability and excellent avalanche characteristics. |
STMicroelectronicsSTW26NM60NN-channel 600 V, 0.135 Ohm typ., 20 A MDmesh II Power MOSFET in a TO-247 package | Power transistors | 4 | 1 | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |