| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| FETs, MOSFETs | 3 | 1 | This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving... Read More | |
STMicroelectronicsSTS5N15N-channel 150 V, 0.057 Ohm, 5 A, SO-8 STripFET(TM) DeepGATE(TM) Power MOSFET | STPOWER N-channel MOSFETs > 30 V to 200 V | 3 | 1 | This STripFET DeepGATE Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances. |
STMicroelectronicsSTS5N15F4N-channel 150 V, 0.057 Ohm, 5 A, SO-8 STripFET(TM) DeepGATE(TM) Power MOSFET | STPOWER N-channel MOSFETs > 30 V to 200 V | 3 | 1 | This STripFET DeepGATE Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances. |
| Power MOSFETs | 1 | 1 | This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. | |
STMicroelectronicsSTS5P | Transistors | 1 | 8 | |
STMicroelectronicsSTS5P3P-Channel 30 V, 0.048 Ohm typ., 5 A STripFET H6 Power MOSFET in SO-8 package | Semiconductors - Discretes | 4 | 1 | This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STMicroelectronicsSTS5P3LLH6P-Channel 30 V, 0.048 Ohm typ., 5 A STripFET H6 Power MOSFET in SO-8 package | Semiconductors - Discretes | 4 | 1 | This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STMicroelectronicsSTS6NF20N-channel 20 V, 30 mOhm typ., 6 A, 2.7 V drive STripFET II Power MOSFET in an SO-8 package | Transistors | 3 | 1 | This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving... Read More |
STMicroelectronicsSTS6NF20VN-channel 20 V, 30 mOhm typ., 6 A, 2.7 V drive STripFET II Power MOSFET in an SO-8 package | Transistors | 3 | 1 | This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving... Read More |
STMicroelectronicsSTS6P | FETs, MOSFETs | 1 | 8 | |