| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTS6P3LLH6P-channel 30 V, 0.024 Ohm typ., 6 A, STripFET(TM) VI DeepGATE Power MOSFET in a SO-8 package | Semiconductors - Discretes | 3 | 1 | This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
| STPOWER N-channel MOSFETs > 30 V to 200 V | 3 | 1 | This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. | |
STMicroelectronicsSTS7P | Transistors | 1 | 8 | |
STMicroelectronicsSTS7P4LLF6P-channel 40 V, 0.0175 Ohm typ., 7 A STripFET F6 Power MOSFET in a SO-8 package | Semiconductors - Discretes | 3 | 1 | This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STMicroelectronicsSTS8DN3LLH5Dual N-channel 30 V, 0.0155 Ohm typ., 10 A STripFET(TM) V Power MOSFET in a SO-8 package | Semiconductors - Discretes | 2 | 1 | This STripFETV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. |
STMicroelectronicsSTS8DN6Automotive-grade dual N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package | Semiconductors - Discretes | 4 | 1 | This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STMicroelectronicsSTS8DN6LF6AGAutomotive-grade dual N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package | Semiconductors - Discretes | 4 | 1 | This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STMicroelectronicsSTS8DNF3Dual N-channel 30 V, 0.017 Ohm typ., 8 A STripFET(TM) II Power MOSFET in a SO-8 package | FETs, MOSFETs | 3 | 4 | This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving... Read More |
STMicroelectronicsSTS8DNF3LLDual N-channel 30 V, 0.017 Ohm typ., 8 A STripFET(TM) II Power MOSFET in a SO-8 package | FETs, MOSFETs | 3 | 4 | This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving... Read More |
STMicroelectronicsSTS8N6Automotive-grade N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package | Power MOSFETs | 3 | 1 | This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |