STS8DN6LF6AG Series

Automotive-grade dual N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package

Catalog

Automotive-grade dual N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package

Part	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Feature	Power - Max [Max]	Grade	Gate Charge (Qg) (Max) @ Vgs	Configuration	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Qualification	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]
STMicroelectronics STS8DN6LF6AG	8-SOIC	3.9 mm	0.154 in	2.5 V	24 mOhm	Logic Level Gate	3.2 W	Automotive	27 nC	2 N-Channel (Dual)	8-SO	8 A	MOSFET (Metal Oxide)	1340 pF	Surface Mount	AEC-Q101	60 V	-55 °C	175 ░C

Catalog

Automotive-grade dual N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package

Description

This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.