S
STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTS10P3LLH6P-channel -30 V, 0.01 Ohm typ., -12.5 A, STripFET H6 Power MOSFET in a SO-8 package | Power transistors | 2 | 1 | This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STMicroelectronicsSTS10P4LLF6P-channel 40 V, 0.0125 Ohm typ., 10 A STripFET F6 Power MOSFET in a SO-8 package | Semiconductors - Discretes | 3 | 1 | This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STMicroelectronicsSTS11 | FETs, MOSFETs | 1 | 8 | |
STMicroelectronicsSTS12 | Single FETs, MOSFETs | 2 | 8 | |
STMicroelectronicsSTS13 | Discrete Semiconductor Products | 1 | 8 | |
STMicroelectronicsSTS15 | Discrete Semiconductor Products | 1 | 8 | |
| Power MOSFETs | 3 | 1 | The SuperMESH series is obtained through an extreme optimization of STs well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including... Read More | |
| Power MOSFETs | 3 | 1 | The SuperMESH series is obtained through an extreme optimization of STs well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including... Read More | |
STMicroelectronicsSTS1NK60ZN-channel 600 V, 13 Ohm typ., 0.25 A Zener-protected SuperMESH(TM) Power MOSFET in SO-8 package | FETs | 3 | 1 | The SuperMESHTMseries is obtained through an extreme optimization of STs well established stripbased PowerMESHTMlayout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTMproducts. |
| Semiconductors - ICs | 3 | 1 | The STS1TX is a very low-power RF transmitter intended for RF wireless applications in the sub-1 GHz band. It is designed to operate both in the license-free ISM and SRD frequency bands at 169, 315, 433, 868, and 915 MHz, but can also be programmed to operate at other frequencies... Read More | |