S
STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Power management | 1 | 4 | The STRG04 is a 60 V, high voltage, full bridge MOSFET driver IC intendedto implement a control scheme specific to the primary side in VCOT based resonant converters. It provides four high current gate drive outputs, each capable of driving one or more N-channel power MOSFETs. The device features programmable... Read More | |
| DC-DC switching converters | 1 | 4 | The STRG06 is a high performance digital controller featuring the innovative and patented ST RVCOT™ control loop that allows to implement a high efficiency DC-DC converter in single stage conversion directly from the 60 V bus. In combination with the STRG02 and STRG04, the device is able to implement a... Read More | |
| Rad-hard discretes | 3 | 1 | The STRH100N10 is a N-channel Power MOSFET developed with the Rad-hard STripFET technology in hermetic TO-254AA package. Specifically designed to sustain Total Ionized Dose and immunity to heavy ion effects, it is qualified as per ESCC 5205/021 detail specification. In case of discrepancies between this datasheet and the relevant agency... Read More | |
| FETs | 4 | 1 | The STRH100N6 is an N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as per ESCC detail specification No. 5205/022 and available in a TO-254AA hermetic package... Read More | |
| Rad-Hard Power MOSFETs | 3 | 1 | The STRH12P10 is a P-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as per ESCC detail specification No. 5205/029 and available in TO-257AA hermetic package, it... Read More | |
| Rad-hard discretes | 2 | 1 | The STRH40N6 is a N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as per ESCC detail specification No. 5205/024 and available in SMD.5 hermetic package it... Read More | |
| Space products | 3 | 1 | The STRH40P10 is a P-channel Power MOSFET developed with the Rad-Hard STripFET technology in TO-254AA hermetic package and qualified as per ESCC detail specification No. 5205/025. Designed for satellite application, it sustains high level of total ionized dose (TID) and immunity to heavy ions effects. In case of discrepancies between... Read More | |
| Space products | 2 | 1 | The STRH8N10 is a N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as per ESCC detail specification No. 5205/023 and available in SMD.5 hermetic package it... Read More | |
| Space products | 3 | 1 | The STRHMF16N20 is a N-channel Power MOSFET able to operate in extreme environment conditions and severe radiation exposure. It provides superior high reliability performance and high immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as per ESCC detail specification 5205/034 and available in SMD.5 hermetic... Read More | |
STMicroelectronicsSTRVS118 | TVS Diodes | 2 | 1 | |