STS5DNF60L Series

Dual N-channel 60V - 0.045Y - 4A - SO-8 STripFET™ Power MOSFET

Catalog

Dual N-channel 60V - 0.045Y - 4A - SO-8 STripFET™ Power MOSFET

Part	Vgs(th) (Max) @ Id	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Feature	Operating Temperature [Min]	Operating Temperature [Max]	Grade	Qualification	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology
STMicroelectronics STS5DNF60L	2.5 V	2 W	1030 pF	45 mOhm	Logic Level Gate	-55 °C	150 °C	Automotive	AEC-Q101	8-SOIC	15 nC	60 V	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	5 A	Surface Mount	MOSFET (Metal Oxide)

Catalog

Dual N-channel 60V - 0.045Y - 4A - SO-8 STripFET™ Power MOSFET

Description

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.