STS5P3LLH6 Series

P-Channel 30 V, 0.048 Ohm typ., 5 A STripFET H6 Power MOSFET in SO-8 package

Catalog

P-Channel 30 V, 0.048 Ohm typ., 5 A STripFET H6 Power MOSFET in SO-8 package

Part	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STS5P3LLH6	8-SOIC	3.9 mm	0.154 in	6 nC	150 °C	2.5 V	20 V	MOSFET (Metal Oxide)	2.7 W	639 pF	30 V	P-Channel	4.5 V, 10 V	Surface Mount	56 mOhm	8-SOIC	5 A

Catalog

P-Channel 30 V, 0.048 Ohm typ., 5 A STripFET H6 Power MOSFET in SO-8 package

Description

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.