STS6NF20 Series

N-channel 20 V, 30 mOhm typ., 6 A, 2.7 V drive STripFET II Power MOSFET in an SO-8 package

Catalog

N-channel 20 V, 30 mOhm typ., 6 A, 2.7 V drive STripFET II Power MOSFET in an SO-8 package

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Package / Case [y]	Package / Case [x]	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
STMicroelectronics STS6NF20V	11.5 nC	MOSFET (Metal Oxide)	1.95 V	4.5 V	8-SOIC	3.9 mm	0.154 in	12 V	2.5 W	20 V	N-Channel	600 mV	150 °C	6 A	8-SOIC	460 pF	Surface Mount

Catalog

N-channel 20 V, 30 mOhm typ., 6 A, 2.7 V drive STripFET II Power MOSFET in an SO-8 package

Description

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.