650 V, 10 A HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE
| Part | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Technology | Mounting Type | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Speed | Package / Case | Supplier Device Package | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Grade | Qualification | Current - Average Rectified (Io) (per Diode) | Diode Configuration | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STPSC10H065B-TR | 100 µA | 1.75 V | 10 A | SiC (Silicon Carbide) Schottky | Surface Mount | -40 °C | 175 ░C | No Recovery Time | DPAK (2 Leads + Tab), SC-63, TO-252-3 | DPAK | 0 ns | 650 V | 480 pF | |||||
STMicroelectronics STPSC10H12B2-TR | 60 µA | 1.5 V | 10 A | SiC (Silicon Carbide) Schottky | Surface Mount | -40 °C | 175 ░C | No Recovery Time | DPAK (2 Leads + Tab), SC-63, TO-252-3 | DPACK HV | 0 ns | 1.2 kV | 725 pF | |||||
STMicroelectronics STPSC10H065GY-TR | 100 µA | 1.75 V | 10 A | SiC (Silicon Carbide) Schottky | Surface Mount | -40 °C | 175 ░C | No Recovery Time | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | D2PAK | 0 ns | 650 V | 480 pF | Automotive | AEC-Q101 | |||
STMicroelectronics STPSC10H12DY | 60 µA | 1.5 V | 10 A | SiC (Silicon Carbide) Schottky | Through Hole | -40 °C | 175 ░C | No Recovery Time | TO-220-2 | TO-220AC | 0 ns | 1.2 kV | 725 pF | Automotive | AEC-Q101 | |||
STMicroelectronics STPSC10TH13TI | 100 µA | 1.75 V | SiC (Silicon Carbide) Schottky | Through Hole | No Recovery Time | TO-220-3 | TO-220AB Insulated | 0 ns | 650 V | 10 A | 1 Pair Series Connection | 150 °C | ||||||
STMicroelectronics STPSC10H12CWL | 30 µA | 1.5 V | SiC (Silicon Carbide) Schottky | Through Hole | -40 °C | 175 ░C | No Recovery Time | TO-247-3 | TO-247-3 | 0 ns | 1.2 kV | 19 A | 1 Pair Common Cathode | |||||
STMicroelectronics STPSC10H12GY-TR | 60 µA | 1.5 V | 10 A | SiC (Silicon Carbide) Schottky | Surface Mount | -40 °C | 175 ░C | No Recovery Time | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | D2PAK | 0 ns | 1.2 kV | 725 pF | Automotive | AEC-Q101 | |||
STMicroelectronics STPSC10H065DLF | 100 µA | 1.55 V | 10 A | SiC (Silicon Carbide) Schottky | Surface Mount | -40 °C | 175 ░C | No Recovery Time | 8-PowerVDFN | PowerFlat™ (8x8) HV | 0 ns | 650 V | 595 pF | |||||
STMicroelectronics STPSC10C065RY | 100 µA | 10 A | SiC (Silicon Carbide) Schottky | Through Hole | -40 °C | 175 ░C | No Recovery Time | I2PAK, TO-262-3 Long Leads, TO-262AA | I2PAK | 0 ns | 650 V | 480 pF | Automotive | AEC-Q101 | ||||
STMicroelectronics STPSC10H065G-TR | 100 µA | 1.75 V | 10 A | SiC (Silicon Carbide) Schottky | Surface Mount | -40 °C | 175 ░C | No Recovery Time | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | D2PAK | 0 ns | 650 V | 480 pF |