STPSC10H065DLF

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 10 A, 32 NC, POWERFLAT

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STPSC10H065DLF

Active

STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 10 A, 32 NC, POWERFLAT

Deep-Dive with AI

Documents +14

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STPSC10H065DLF

Capacitance @ Vr, F	595 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	8-PowerVDFN
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PowerFlat™ (8x8) HV
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.55 V

STPSC10H065DLF Series

650 V 10 A power Schottky silicon carbide diode

Part	Supplier Device Package	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Package / Case	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Speed	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)
STMicroelectronics STPSC10H065DLF	PowerFlat™ (8x8) HV	SiC (Silicon Carbide) Schottky	650 V	10 A	8-PowerVDFN	Surface Mount	-40 °C	175 ░C	100 µA	No Recovery Time	595 pF	1.55 V	0 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.96
	Digi-Reel®	1	$ 3.96
	Tape & Reel (TR)	3000	$ 1.93
Newark	Each (Supplied on Cut Tape)	1	$ 6.09

Description

General part information

STPSC10H065DLF Series

This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Qualified in low profile package, the STPSC10H065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains.