STPSC10H065G-TR

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 10 A, 28.5 NC, TO-263 (D2PAK)

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DocumentsTechnical Data Sheet EN Product Change Notice EN +14

STPSC10H065G-TR

Active

STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 10 A, 28.5 NC, TO-263 (D2PAK)

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DocumentsTechnical Data Sheet EN Product Change Notice EN +14

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STPSC10H065G-TR	STPSC10H065 Series

Capacitance @ Vr, F	480 pF	480 pF
Current - Average Rectified (Io)	10 A	10 A
Current - Reverse Leakage @ Vr	100 µA	100 µA
Mounting Type	Surface Mount	Surface Mount
Operating Temperature - Junction [Max]	175 ░C	175 ░C
Operating Temperature - Junction [Min]	-40 °C	-40 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3	SC-63, DPAK (2 Leads + Tab), TO-252-3, D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	0 ns	0 ns
Speed	No Recovery Time	No Recovery Time
Supplier Device Package	D2PAK	DPAK, D2PAK
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V	650 V
Voltage - Forward (Vf) (Max) @ If	1.75 V	1.75 V

STPSC10H065 Series

650 V, 10 A High Surge Silicon Carbide Power Schottky Diode

Part	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Technology	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Speed	Package / Case	Supplier Device Package	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F
STMicroelectronics STPSC10H065B-TR	100 µA	1.75 V	10 A	SiC (Silicon Carbide) Schottky	Surface Mount	-40 °C	175 ░C	No Recovery Time	DPAK (2 Leads + Tab), SC-63, TO-252-3	DPAK	0 ns	650 V	480 pF
STMicroelectronics STPSC10H065G-TR	100 µA	1.75 V	10 A	SiC (Silicon Carbide) Schottky	Surface Mount	-40 °C	175 ░C	No Recovery Time	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	D2PAK	0 ns	650 V	480 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.17
		10	$ 2.67
		100	$ 2.16
		500	$ 1.92
	Digi-Reel®	1	$ 3.17
		10	$ 2.67
		100	$ 2.16
		500	$ 1.92
	Tape & Reel (TR)	1000	$ 1.64
		2000	$ 1.55
		5000	$ 1.48
Newark	Each (Supplied on Cut Tape)	1	$ 4.91
		10	$ 3.56
		25	$ 3.30
		50	$ 3.04
		100	$ 2.78
		250	$ 2.62
		500	$ 2.45
		1000	$ 2.36

Description

General part information

STPSC10H065 Series

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

This STPSC10H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Documents

Technical documentation and resources

STPSC10H065G-TR

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STPSC10H065G-TR

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Technical Specifications

STPSC10H065 Series

Pricing

Description

STPSC10H065 Series

Documents

Technical Data Sheet EN

Product Change Notice EN

Diodes & Rectifiers Selection Guide

Datasheet

DS9226

AN4242

AN5088

Technical Specifications

STPSC10H065 Series