STPSC10TH13TI
Active2 X 650V TANDEM, 10 A HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE
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STPSC10TH13TI
Active2 X 650V TANDEM, 10 A HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE
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Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 6.84 | |
| 50 | $ 5.46 | |||
| 100 | $ 4.88 | |||
| 500 | $ 4.31 | |||
| 1000 | $ 3.88 | |||
| 2000 | $ 3.63 | |||
Description
General part information
STPSC10TH13TI Series
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.