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STPSC10H12B2-TR - MFG_DPAK(TO252-3)

STPSC10H12B2-TR

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 10 A, 57 NC, DPAK-HV

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Search across all available documentation for this part.

DocumentsAN4242+13
STPSC10H12B2-TR - MFG_DPAK(TO252-3)

STPSC10H12B2-TR

Active
STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.2 KV, 10 A, 57 NC, DPAK-HV

Deep-Dive with AI

DocumentsAN4242+13

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.82
10$ 4.05
100$ 3.27
500$ 2.91
1000$ 2.49
Digi-Reel® 1$ 4.82
10$ 4.05
100$ 3.27
500$ 2.91
1000$ 2.49
Tape & Reel (TR) 2500$ 2.35
NewarkEach 1$ 6.10
10$ 4.74
25$ 4.44
50$ 4.15
100$ 3.85
250$ 3.70
500$ 3.54

Description

General part information

STPSC10H12B2-TR Series

This 10A, 1200V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature

Housed in DPAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, servers, DC/DC modules, easing the compliance to IEC-60664-1.

The STPSC10H12B2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.