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STPSC10H12CWL - TO-247-3

STPSC10H12CWL

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, DUAL COMMON CATHODE, 1.2 KV, 10 A, 36 NC, TO-247

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STPSC10H12CWL - TO-247-3

STPSC10H12CWL

Active
STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, DUAL COMMON CATHODE, 1.2 KV, 10 A, 36 NC, TO-247

Deep-Dive with AI

DocumentsDatasheet+12

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 7.94
10$ 5.40
100$ 3.96
600$ 3.39
LCSCPiece 1$ 7.03
10$ 6.71
30$ 6.52
90$ 6.35
510$ 6.27
NewarkEach 1$ 7.88
10$ 5.17
25$ 4.74
60$ 4.32
120$ 3.89
270$ 3.88

Description

General part information

STPSC10H12C Series

The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VFSchottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.