BSC014N04LSIATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.45 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE

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BSC014N04LSIATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; SUPERSO8 5X6 PACKAGE; 1.45 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSC014N04LSIATMA1

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	4000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.5 W, 96 W
Rds On (Max) @ Id, Vgs	1.45 mOhm
Supplier Device Package	PG-TDSON-8 FL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

BSC014 Series

Part	Package / Case	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id [Max]
Infineon Technologies BSC014N06LS5ATMA1	8-PowerTDFN	60 V	MOSFET (Metal Oxide)	PG-TDSON-8-7	Surface Mount
Infineon Technologies BSC014NE2LSIATMA1	8-PowerTDFN	25 V	MOSFET (Metal Oxide)	PG-TDSON-8-7	Surface Mount	1.4 mOhm	N-Channel	33 A 100 A	39 nC	-55 °C	150 °C	2700 pF	2 V	2.5 W	74 W	4.5 V 10 V	20 V
Infineon Technologies BSC014N04LSIATMA1	8-PowerTDFN	40 V	MOSFET (Metal Oxide)	PG-TDSON-8 FL	Surface Mount	1.45 mOhm	N-Channel			-55 °C	150 °C	4000 pF	2 V			4.5 V 10 V	20 V	2.5 W 96 W	55 nC
Infineon Technologies BSC014N06NSSCATMA1	8-PowerWDFN	60 V	MOSFET (Metal Oxide)	PG-WSON-8-2	Surface Mount	1.4 mOhm	N-Channel	261 A		-55 °C	175 ░C	8125 pF	3.3 V			6 V 10 V	20 V	3 W 188 W	104 nC
Infineon Technologies BSC014N06NSATMA1	8-PowerTDFN	60 V	MOSFET (Metal Oxide)	PG-TDSON-8-17	Surface Mount	1.45 mOhm	N-Channel	30 A 100 A	89 nC	-55 °C	175 ░C	6500 pF				6 V 10 V	20 V	2.5 W 156 W		2.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.52
		10	$ 1.65
		100	$ 1.16
	Digi-Reel®	1	$ 2.52
		10	$ 1.65
		100	$ 1.16
	Tape & Reel (TR)	5000	$ 1.16
Newark	Each (Supplied on Cut Tape)	1	$ 3.29
		10	$ 2.58
		25	$ 2.36
		50	$ 2.16

Description

General part information

BSC014 Series

New 40V and 60V product families, feature not only the industry’s lowest RDS(on)but also a perfect switching behavior for fast switching applications. 15% lower RDS(on)and 31% lower figure of merit (RDS(on)x Qg) compared to alternative devices has been realized by advanced thin wafer technology.

Documents

Technical documentation and resources