BSC014N06LS5ATMA1

Active

Infineon Technologies

MOSFET 60V TDSON-8-7

Search across all available documentation for this part.

Active

Infineon Technologies

MOSFET 60V TDSON-8-7

Technical Specifications

Parameters and characteristics for this part

Part	Package / Case	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id [Max]
Infineon Technologies BSC014N06LS5ATMA1	8-PowerTDFN	60 V	MOSFET (Metal Oxide)	PG-TDSON-8-7	Surface Mount
Infineon Technologies BSC014NE2LSIATMA1	8-PowerTDFN	25 V	MOSFET (Metal Oxide)	PG-TDSON-8-7	Surface Mount	1.4 mOhm	N-Channel	33 A 100 A	39 nC	-55 °C	150 °C	2700 pF	2 V	2.5 W	74 W	4.5 V 10 V	20 V
Infineon Technologies BSC014N04LSIATMA1	8-PowerTDFN	40 V	MOSFET (Metal Oxide)	PG-TDSON-8 FL	Surface Mount	1.45 mOhm	N-Channel			-55 °C	150 °C	4000 pF	2 V			4.5 V 10 V	20 V	2.5 W 96 W	55 nC
Infineon Technologies BSC014N06NSSCATMA1	8-PowerWDFN	60 V	MOSFET (Metal Oxide)	PG-WSON-8-2	Surface Mount	1.4 mOhm	N-Channel	261 A		-55 °C	175 ░C	8125 pF	3.3 V			6 V 10 V	20 V	3 W 188 W	104 nC
Infineon Technologies BSC014N06NSATMA1	8-PowerTDFN	60 V	MOSFET (Metal Oxide)	PG-TDSON-8-17	Surface Mount	1.45 mOhm	N-Channel	30 A 100 A	89 nC	-55 °C	175 ░C	6500 pF				6 V 10 V	20 V	2.5 W 156 W		2.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

60 V Surface Mount PG-TDSON-8-7

Technical documentation and resources

No documents available