MOSFET 60V TDSON-8-7
| Part | Package / Case | Drain to Source Voltage (Vdss) | Technology | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs | FET Type | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8-PowerTDFN | 60 V | MOSFET (Metal Oxide) | PG-TDSON-8-7 | Surface Mount | |||||||||||||||
Infineon Technologies | 8-PowerTDFN | 25 V | MOSFET (Metal Oxide) | PG-TDSON-8-7 | Surface Mount | 1.4 mOhm | N-Channel | 33 A 100 A | 39 nC | -55 °C | 150 °C | 2700 pF | 2 V | 2.5 W | 74 W | 4.5 V 10 V | 20 V | |||
Infineon Technologies | 8-PowerTDFN | 40 V | MOSFET (Metal Oxide) | PG-TDSON-8 FL | Surface Mount | 1.45 mOhm | N-Channel | -55 °C | 150 °C | 4000 pF | 2 V | 4.5 V 10 V | 20 V | 2.5 W 96 W | 55 nC | |||||
Infineon Technologies | 8-PowerWDFN | 60 V | MOSFET (Metal Oxide) | PG-WSON-8-2 | Surface Mount | 1.4 mOhm | N-Channel | 261 A | -55 °C | 175 ░C | 8125 pF | 3.3 V | 6 V 10 V | 20 V | 3 W 188 W | 104 nC | ||||
Infineon Technologies | 8-PowerTDFN | 60 V | MOSFET (Metal Oxide) | PG-TDSON-8-17 | Surface Mount | 1.45 mOhm | N-Channel | 30 A 100 A | 89 nC | -55 °C | 175 ░C | 6500 pF | 6 V 10 V | 20 V | 2.5 W 156 W | 2.8 V |