IPA65R190CFDXKSA1
UnknownPOWER MOSFET, N CHANNEL, 700 V, 17.5 A, 0.171 OHM, TO-220, THROUGH HOLE
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IPA65R190CFDXKSA1
UnknownPOWER MOSFET, N CHANNEL, 700 V, 17.5 A, 0.171 OHM, TO-220, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPA65R190CFDXKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17.5 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 68 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 34 W |
| Rds On (Max) @ Id, Vgs | 190 mOhm |
| Supplier Device Package | PG-TO220-3-111 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Newark | Each | 1 | $ 4.39 | |
| 10 | $ 3.94 | |||
| 25 | $ 3.70 | |||
| 50 | $ 3.47 | |||
| 100 | $ 3.23 | |||
| 250 | $ 3.00 | |||
| 500 | $ 2.76 | |||
Description
General part information
IPA65R Series
650V CoolMOS™ CFD2 power transistor is second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 device is the successor of 600V CFD with improved energy efficiency. The softer commutation behaviour and therefore better EMI behaviour gives this product a clear advantage in comparison with competitor parts. Potential applications include telecom, server, solar, HID lamp ballast, LED lighting and eMobility.
Documents
Technical documentation and resources