IPA65R110CFDXKSA1

Obsolete

Infineon Technologies

COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ;

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IPA65R110CFDXKSA1

Obsolete

Infineon Technologies

COOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPA65R110CFDXKSA1

Current - Continuous Drain (Id) @ 25°C	31.2 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	118 nC
Input Capacitance (Ciss) (Max) @ Vds	3240 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	34.7 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	PG-TO220-3-111
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPA65R Series

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [x]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPA65R190CFDXKSA2	20 V	190 mOhm	TO-220-3 Full Pack	4.5 V	10 V	650 V	-55 °C	150 °C	MOSFET (Metal Oxide)	68 nC	Through Hole	PG-TO220-FP	1850 pF	N-Channel	17.5 A	34 W
Infineon Technologies IPA65R190C7XKSA1	20 V	190 mOhm	TO-220-3 Full Pack	4 V	10 V	650 V	-55 °C	150 °C	MOSFET (Metal Oxide)		Through Hole	PG-TO220-FP	1150 pF	N-Channel	8 A		23 nC
Infineon Technologies IPA65R110CFDXKSA2	20 V	110 mOhm	TO-220-3 Full Pack	4.5 V	10 V	650 V	-55 °C	150 °C	MOSFET (Metal Oxide)	118 nC	Through Hole	PG-TO220-FP	3240 pF	N-Channel	31.2 A			34.7 W
Infineon Technologies IPA65R190CFDXKSA1	20 V	190 mOhm	TO-220-3 Full Pack	4.5 V	10 V	650 V	-55 °C	150 °C	MOSFET (Metal Oxide)	68 nC	Through Hole	PG-TO220-3-111	1850 pF	N-Channel	17.5 A	34 W
Infineon Technologies IPA65R600C6XKSA1	20 V	600 mOhm	TO-220-3 Full Pack	3.5 V	10 V	650 V	-55 °C	150 °C	MOSFET (Metal Oxide)		Through Hole	PG-TO220-3-111	440 pF	N-Channel	7.3 A		23 nC	28 W
Infineon Technologies IPA65R190E6XKSA1	20 V	190 mOhm	TO-220-3 Full Pack	3.5 V	10 V	650 V	-55 °C	150 °C	MOSFET (Metal Oxide)		Through Hole	PG-TO220-3-111	1620 pF	N-Channel	20.2 A	34 W			73 nC
Infineon Technologies IPA65R125C7XKSA1	20 V	125 mOhm	TO-220-3 Full Pack	4 V	10 V	650 V	-55 °C	150 °C	MOSFET (Metal Oxide)	35 nC	Through Hole	PG-TO220-FP		N-Channel	10 A	32 W				1670 pF
Infineon Technologies IPA65R110CFDXKSA1	20 V	110 mOhm	TO-220-3 Full Pack	4.5 V	10 V	650 V	-55 °C	150 °C	MOSFET (Metal Oxide)	118 nC	Through Hole	PG-TO220-3-111	3240 pF	N-Channel	31.2 A			34.7 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPA65R Series

Replacement for650V CoolMOS™ CFD2is600V CoolMOS™ CFD7 650V CoolMOS™ CFD2is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Documents

Technical documentation and resources