IPA65R190C7XKSA1
ActiveCOOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 FULLPAK PACKAGE; 190 MOHM; HIGHEST PERFORMANCE
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IPA65R190C7XKSA1
ActiveCOOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 FULLPAK PACKAGE; 190 MOHM; HIGHEST PERFORMANCE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPA65R190C7XKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Rds On (Max) @ Id, Vgs | 190 mOhm |
| Supplier Device Package | PG-TO220-FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
IPA65R Series
| Part | Vgs (Max) | Rds On (Max) @ Id, Vgs | Package / Case | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [x] | Input Capacitance (Ciss) (Max) @ Vds [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 190 mOhm | TO-220-3 Full Pack | 4.5 V | 10 V | 650 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 68 nC | Through Hole | PG-TO220-FP | 1850 pF | N-Channel | 17.5 A | 34 W | ||||
Infineon Technologies | 20 V | 190 mOhm | TO-220-3 Full Pack | 4 V | 10 V | 650 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | Through Hole | PG-TO220-FP | 1150 pF | N-Channel | 8 A | 23 nC | |||||
Infineon Technologies | 20 V | 110 mOhm | TO-220-3 Full Pack | 4.5 V | 10 V | 650 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 118 nC | Through Hole | PG-TO220-FP | 3240 pF | N-Channel | 31.2 A | 34.7 W | ||||
Infineon Technologies | 20 V | 190 mOhm | TO-220-3 Full Pack | 4.5 V | 10 V | 650 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 68 nC | Through Hole | PG-TO220-3-111 | 1850 pF | N-Channel | 17.5 A | 34 W | ||||
Infineon Technologies | 20 V | 600 mOhm | TO-220-3 Full Pack | 3.5 V | 10 V | 650 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | Through Hole | PG-TO220-3-111 | 440 pF | N-Channel | 7.3 A | 23 nC | 28 W | ||||
Infineon Technologies | 20 V | 190 mOhm | TO-220-3 Full Pack | 3.5 V | 10 V | 650 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | Through Hole | PG-TO220-3-111 | 1620 pF | N-Channel | 20.2 A | 34 W | 73 nC | ||||
Infineon Technologies | 20 V | 125 mOhm | TO-220-3 Full Pack | 4 V | 10 V | 650 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 35 nC | Through Hole | PG-TO220-FP | N-Channel | 10 A | 32 W | 1670 pF | ||||
Infineon Technologies | 20 V | 110 mOhm | TO-220-3 Full Pack | 4.5 V | 10 V | 650 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 118 nC | Through Hole | PG-TO220-3-111 | 3240 pF | N-Channel | 31.2 A | 34.7 W |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPA65R Series
Infineon’sCoolMOS™ C7 superjunction MOSFETseries is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
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