IPA65R190E6XKSA1
NRNDPOWER MOSFET, N CHANNEL, 650 V, 20.2 A, 0.17 OHM, TO-220FP, THROUGH HOLE
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IPA65R190E6XKSA1
NRNDPOWER MOSFET, N CHANNEL, 650 V, 20.2 A, 0.17 OHM, TO-220FP, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPA65R190E6XKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20.2 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [x] | 73 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 34 W |
| Rds On (Max) @ Id, Vgs | 190 mOhm |
| Supplier Device Package | PG-TO220-3-111 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 500 | $ 2.11 | |
Description
General part information
IPA65R Series
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.
Documents
Technical documentation and resources