IPA65R110CFDXKSA2

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Infineon Technologies

MOSFET N-CH 650V 31.2A TO220

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IPA65R110CFDXKSA2

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Infineon Technologies

MOSFET N-CH 650V 31.2A TO220

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPA65R110CFDXKSA2

Current - Continuous Drain (Id) @ 25°C	31.2 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	118 nC
Input Capacitance (Ciss) (Max) @ Vds	3240 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	34.7 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPA65R Series

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [x]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPA65R190CFDXKSA2	20 V	190 mOhm	TO-220-3 Full Pack	4.5 V	10 V	650 V	-55 °C	150 °C	MOSFET (Metal Oxide)	68 nC	Through Hole	PG-TO220-FP	1850 pF	N-Channel	17.5 A	34 W
Infineon Technologies IPA65R190C7XKSA1	20 V	190 mOhm	TO-220-3 Full Pack	4 V	10 V	650 V	-55 °C	150 °C	MOSFET (Metal Oxide)		Through Hole	PG-TO220-FP	1150 pF	N-Channel	8 A		23 nC
Infineon Technologies IPA65R110CFDXKSA2	20 V	110 mOhm	TO-220-3 Full Pack	4.5 V	10 V	650 V	-55 °C	150 °C	MOSFET (Metal Oxide)	118 nC	Through Hole	PG-TO220-FP	3240 pF	N-Channel	31.2 A			34.7 W
Infineon Technologies IPA65R190CFDXKSA1	20 V	190 mOhm	TO-220-3 Full Pack	4.5 V	10 V	650 V	-55 °C	150 °C	MOSFET (Metal Oxide)	68 nC	Through Hole	PG-TO220-3-111	1850 pF	N-Channel	17.5 A	34 W
Infineon Technologies IPA65R600C6XKSA1	20 V	600 mOhm	TO-220-3 Full Pack	3.5 V	10 V	650 V	-55 °C	150 °C	MOSFET (Metal Oxide)		Through Hole	PG-TO220-3-111	440 pF	N-Channel	7.3 A		23 nC	28 W
Infineon Technologies IPA65R190E6XKSA1	20 V	190 mOhm	TO-220-3 Full Pack	3.5 V	10 V	650 V	-55 °C	150 °C	MOSFET (Metal Oxide)		Through Hole	PG-TO220-3-111	1620 pF	N-Channel	20.2 A	34 W			73 nC
Infineon Technologies IPA65R125C7XKSA1	20 V	125 mOhm	TO-220-3 Full Pack	4 V	10 V	650 V	-55 °C	150 °C	MOSFET (Metal Oxide)	35 nC	Through Hole	PG-TO220-FP		N-Channel	10 A	32 W				1670 pF
Infineon Technologies IPA65R110CFDXKSA1	20 V	110 mOhm	TO-220-3 Full Pack	4.5 V	10 V	650 V	-55 °C	150 °C	MOSFET (Metal Oxide)	118 nC	Through Hole	PG-TO220-3-111	3240 pF	N-Channel	31.2 A			34.7 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.22
		10	$ 4.89
		100	$ 3.57
		500	$ 3.09

Description

General part information

IPA65R Series

N-Channel 650 V 31.2A (Tc) 34.7W (Tc) Through Hole PG-TO220-FP

Documents

Technical documentation and resources