STPSC10H12B-TR1

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STMicroelectronics

DIODE SIL CARBIDE 1.2KV 10A DPAK

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STPSC10H12B-TR1

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STMicroelectronics

DIODE SIL CARBIDE 1.2KV 10A DPAK

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Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STPSC10H12B-TR1	STPSC10 Series

Capacitance @ Vr, F	725 pF	480 - 725 pF
Current - Average Rectified (Io)	10 A	10 A
Current - Average Rectified (Io) (per Diode)	-	10 - 19 A
Current - Reverse Leakage @ Vr	60 µA	30 - 100 µA
Diode Configuration	-	1 Pair Series Connection, 1 Pair Common Cathode
Grade	-	Automotive
Mounting Type	Surface Mount	Surface Mount, Through Hole
Operating Temperature - Junction	-	150 °C
Operating Temperature - Junction [Max]	175 ░C	175 ░C
Operating Temperature - Junction [Min]	-40 °C	-40 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3	SC-63, DPAK (2 Leads + Tab), TO-252-3, D2PAK (2 Leads + Tab), TO-263AB, TO-263-3, TO-220-2, TO-220-3, TO-247-3, 8-PowerVDFN, TO-262AA, TO-262-3 Long Leads, I2PAK
Qualification	-	AEC-Q101
Reverse Recovery Time (trr)	0 ns	0 ns
Speed	No Recovery Time	No Recovery Time
Supplier Device Package	DPAK	DPAK, DPACK HV, D2PAK, TO-220AC, TO-220AB Insulated, TO-247-3, PowerFlat™ (8x8) HV, I2PAK
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV	1.2 - 650 V
Voltage - Forward (Vf) (Max) @ If	1.5 V	1.5 - 1.75 V

STPSC10 Series

650 V, 10 A HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE

Part	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Technology	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Speed	Package / Case	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Grade	Qualification	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Operating Temperature - Junction
STMicroelectronics STPSC10H065B-TR	100 µA	1.75 V	10 A	SiC (Silicon Carbide) Schottky	Surface Mount	-40 °C	175 ░C	No Recovery Time	DPAK (2 Leads + Tab), SC-63, TO-252-3	DPAK	650 V	480 pF
STMicroelectronics STPSC10H12B-TR1	60 µA	1.5 V	10 A	SiC (Silicon Carbide) Schottky	Surface Mount	-40 °C	175 ░C	No Recovery Time	DPAK (2 Leads + Tab), SC-63, TO-252-3	DPAK	1.2 kV	725 pF
STMicroelectronics STPSC10H12B2-TR	60 µA	1.5 V	10 A	SiC (Silicon Carbide) Schottky	Surface Mount	-40 °C	175 ░C	No Recovery Time	DPAK (2 Leads + Tab), SC-63, TO-252-3	DPACK HV	1.2 kV	725 pF
STMicroelectronics STPSC10H065GY-TR	100 µA	1.75 V	10 A	SiC (Silicon Carbide) Schottky	Surface Mount	-40 °C	175 ░C	No Recovery Time	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	D2PAK	650 V	480 pF	Automotive	AEC-Q101
STMicroelectronics STPSC10H12DY	60 µA	1.5 V	10 A	SiC (Silicon Carbide) Schottky	Through Hole	-40 °C	175 ░C	No Recovery Time	TO-220-2	TO-220AC	1.2 kV	725 pF	Automotive	AEC-Q101
STMicroelectronics STPSC10TH13TI	100 µA	1.75 V		SiC (Silicon Carbide) Schottky	Through Hole			No Recovery Time	TO-220-3	TO-220AB Insulated	650 V				10 A	1 Pair Series Connection	150 °C
STMicroelectronics STPSC10H12CWL	30 µA	1.5 V		SiC (Silicon Carbide) Schottky	Through Hole	-40 °C	175 ░C	No Recovery Time	TO-247-3	TO-247-3	1.2 kV				19 A	1 Pair Common Cathode
STMicroelectronics STPSC10H12GY-TR	60 µA	1.5 V	10 A	SiC (Silicon Carbide) Schottky	Surface Mount	-40 °C	175 ░C	No Recovery Time	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	D2PAK	1.2 kV	725 pF	Automotive	AEC-Q101
STMicroelectronics STPSC10H065DLF	100 µA	1.55 V	10 A	SiC (Silicon Carbide) Schottky	Surface Mount	-40 °C	175 ░C	No Recovery Time	8-PowerVDFN	PowerFlat™ (8x8) HV	650 V	595 pF
STMicroelectronics STPSC10C065RY	100 µA		10 A	SiC (Silicon Carbide) Schottky	Through Hole	-40 °C	175 ░C	No Recovery Time	I2PAK, TO-262-3 Long Leads, TO-262AA	I2PAK	650 V	480 pF	Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

STPSC10 Series

Diode 1200 V 10A Surface Mount DPAK

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