IRF7341GTRPBF

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Infineon Technologies

DUAL MOSFET, N CHANNEL, 55 V, 5.1 A, 0.043 OHM, SOIC, SURFACE MOUNT

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IRF7341GTRPBF

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Infineon Technologies

DUAL MOSFET, N CHANNEL, 55 V, 5.1 A, 0.043 OHM, SOIC, SURFACE MOUNT

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7341GTRPBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5.1 A
Drain to Source Voltage (Vdss)	55 V
Gate Charge (Qg) (Max) @ Vgs	44 nC
Input Capacitance (Ciss) (Max) @ Vds	780 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2.4 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

IRF734 Series

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	FET Feature	Package / Case	Package / Case [y]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Configuration	Technology	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IRF7341PBF	-55 °C	150 °C	8-SO	Surface Mount	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	4.7 A	2 N-Channel (Dual)	MOSFET (Metal Oxide)	50 mOhm	2 W	740 pF	55 V	1 V
Infineon Technologies IRF7343QTRPBF			8-SO	Surface Mount		8-SOIC	3.9 mm	0.154 in	3.4 A 4.7 A	N and P-Channel	MOSFET (Metal Oxide)	50 mOhm	2 W	740 pF	55 V	1 V
Infineon Technologies IRF7342PBF	-55 °C	150 °C	8-SO	Surface Mount	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	3.4 A	2 P-Channel	MOSFET (Metal Oxide)	105 mOhm	2 W	690 pF	55 V	1 V	38 nC
Infineon Technologies IRF7342TRPBF	-55 °C	150 °C	8-SO	Surface Mount	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	3.4 A	2 P-Channel	MOSFET (Metal Oxide)	105 mOhm	2 W	690 pF	55 V	1 V	38 nC
Infineon Technologies IRF7342QTRPBF			8-SO	Surface Mount	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	3.4 A	2 P-Channel	MOSFET (Metal Oxide)	105 mOhm	2 W	690 pF	55 V	1 V	38 nC
Infineon Technologies IRF7343TRPBF	-55 °C	150 °C	8-SO	Surface Mount		8-SOIC	3.9 mm	0.154 in	3.4 A 4.7 A	N and P-Channel	MOSFET (Metal Oxide)	50 mOhm	2 W	740 pF	55 V	1 V
Infineon Technologies IRF7341GTRPBF	-55 °C	175 ░C	8-SO	Surface Mount		8-SOIC	3.9 mm	0.154 in	5.1 A	2 N-Channel (Dual)	MOSFET (Metal Oxide)	50 mOhm	2.4 W		55 V	1 V		44 nC	780 pF
Infineon Technologies IRF7343PBF	-55 °C	150 °C	8-SO	Surface Mount		8-SOIC	3.9 mm	0.154 in	3.4 A 4.7 A	N and P-Channel	MOSFET (Metal Oxide)	50 mOhm	2 W	740 pF	55 V	1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.54
		10	$ 1.64
		100	$ 1.13
		500	$ 0.90
		1000	$ 0.83
		2000	$ 0.77
	Digi-Reel®	1	$ 2.54
		10	$ 1.64
		100	$ 1.13
		500	$ 0.90
		1000	$ 0.83
		2000	$ 0.77
	Tape & Reel (TR)	4000	$ 0.76
Newark	Each (Supplied on Cut Tape)	1	$ 2.31
		10	$ 1.42
		25	$ 1.32
		50	$ 1.23
		100	$ 1.12
		250	$ 1.05
		500	$ 0.92

Description

General part information

IRF734 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources