IRF7342TRPBF
ActiveDUAL MOSFET, P CHANNEL, 55 V, 55 V, 3.4 A, 3.4 A, 0.095 OHM
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IRF7342TRPBF
ActiveDUAL MOSFET, P CHANNEL, 55 V, 55 V, 3.4 A, 3.4 A, 0.095 OHM
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRF7342TRPBF |
|---|---|
| Configuration | 2 P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4 A |
| Drain to Source Voltage (Vdss) | 55 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 38 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 690 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power - Max [Max] | 2 W |
| Rds On (Max) @ Id, Vgs | 105 mOhm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.22 | |
| 10 | $ 1.00 | |||
| 100 | $ 0.78 | |||
| 500 | $ 0.66 | |||
| 1000 | $ 0.54 | |||
| 2000 | $ 0.51 | |||
| Digi-Reel® | 1 | $ 1.22 | ||
| 10 | $ 1.00 | |||
| 100 | $ 0.78 | |||
| 500 | $ 0.66 | |||
| 1000 | $ 0.54 | |||
| 2000 | $ 0.51 | |||
| Tape & Reel (TR) | 4000 | $ 0.51 | ||
| 8000 | $ 0.48 | |||
| 12000 | $ 0.46 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.59 | |
| 10 | $ 1.07 | |||
| 25 | $ 1.06 | |||
| 50 | $ 0.92 | |||
| 100 | $ 0.78 | |||
| 250 | $ 0.77 | |||
| 500 | $ 0.63 | |||
| 1000 | $ 0.54 | |||
Description
General part information
IRF734 Series
The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
Documents
Technical documentation and resources