IRF734 Series

Catalog

MOSFET 2N-CH 55V 4.7A 8SO

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	FET Feature	Package / Case	Package / Case [y]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Configuration	Technology	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IRF7341PBF	-55 °C	150 °C	8-SO	Surface Mount	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	4.7 A	2 N-Channel (Dual)	MOSFET (Metal Oxide)	50 mOhm	2 W	740 pF	55 V	1 V
Infineon Technologies IRF7343QTRPBF			8-SO	Surface Mount		8-SOIC	3.9 mm	0.154 in	3.4 A 4.7 A	N and P-Channel	MOSFET (Metal Oxide)	50 mOhm	2 W	740 pF	55 V	1 V
Infineon Technologies IRF7342PBF	-55 °C	150 °C	8-SO	Surface Mount	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	3.4 A	2 P-Channel	MOSFET (Metal Oxide)	105 mOhm	2 W	690 pF	55 V	1 V	38 nC
Infineon Technologies IRF7342TRPBF	-55 °C	150 °C	8-SO	Surface Mount	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	3.4 A	2 P-Channel	MOSFET (Metal Oxide)	105 mOhm	2 W	690 pF	55 V	1 V	38 nC
Infineon Technologies IRF7342QTRPBF			8-SO	Surface Mount	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	3.4 A	2 P-Channel	MOSFET (Metal Oxide)	105 mOhm	2 W	690 pF	55 V	1 V	38 nC
Infineon Technologies IRF7343TRPBF	-55 °C	150 °C	8-SO	Surface Mount		8-SOIC	3.9 mm	0.154 in	3.4 A 4.7 A	N and P-Channel	MOSFET (Metal Oxide)	50 mOhm	2 W	740 pF	55 V	1 V
Infineon Technologies IRF7341GTRPBF	-55 °C	175 ░C	8-SO	Surface Mount		8-SOIC	3.9 mm	0.154 in	5.1 A	2 N-Channel (Dual)	MOSFET (Metal Oxide)	50 mOhm	2.4 W		55 V	1 V		44 nC	780 pF
Infineon Technologies IRF7343PBF	-55 °C	150 °C	8-SO	Surface Mount		8-SOIC	3.9 mm	0.154 in	3.4 A 4.7 A	N and P-Channel	MOSFET (Metal Oxide)	50 mOhm	2 W	740 pF	55 V	1 V