IRF7342PBF

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Infineon Technologies

IR MOSFET™ P+P DUAL POWER MOSFET ; SO-8 PACKAGE; 105 MOHM;

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IRF7342PBF

Unknown

Infineon Technologies

IR MOSFET™ P+P DUAL POWER MOSFET ; SO-8 PACKAGE; 105 MOHM;

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DocumentsIR Part Numbering System

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7342PBF

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	3.4 A
Drain to Source Voltage (Vdss)	55 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	690 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

IRF734 Series

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	FET Feature	Package / Case	Package / Case [y]	Package / Case [x]	Current - Continuous Drain (Id) @ 25°C	Configuration	Technology	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IRF7341PBF	-55 °C	150 °C	8-SO	Surface Mount	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	4.7 A	2 N-Channel (Dual)	MOSFET (Metal Oxide)	50 mOhm	2 W	740 pF	55 V	1 V
Infineon Technologies IRF7343QTRPBF			8-SO	Surface Mount		8-SOIC	3.9 mm	0.154 in	3.4 A 4.7 A	N and P-Channel	MOSFET (Metal Oxide)	50 mOhm	2 W	740 pF	55 V	1 V
Infineon Technologies IRF7342PBF	-55 °C	150 °C	8-SO	Surface Mount	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	3.4 A	2 P-Channel	MOSFET (Metal Oxide)	105 mOhm	2 W	690 pF	55 V	1 V	38 nC
Infineon Technologies IRF7342TRPBF	-55 °C	150 °C	8-SO	Surface Mount	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	3.4 A	2 P-Channel	MOSFET (Metal Oxide)	105 mOhm	2 W	690 pF	55 V	1 V	38 nC
Infineon Technologies IRF7342QTRPBF			8-SO	Surface Mount	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	3.4 A	2 P-Channel	MOSFET (Metal Oxide)	105 mOhm	2 W	690 pF	55 V	1 V	38 nC
Infineon Technologies IRF7343TRPBF	-55 °C	150 °C	8-SO	Surface Mount		8-SOIC	3.9 mm	0.154 in	3.4 A 4.7 A	N and P-Channel	MOSFET (Metal Oxide)	50 mOhm	2 W	740 pF	55 V	1 V
Infineon Technologies IRF7341GTRPBF	-55 °C	175 ░C	8-SO	Surface Mount		8-SOIC	3.9 mm	0.154 in	5.1 A	2 N-Channel (Dual)	MOSFET (Metal Oxide)	50 mOhm	2.4 W		55 V	1 V		44 nC	780 pF
Infineon Technologies IRF7343PBF	-55 °C	150 °C	8-SO	Surface Mount		8-SOIC	3.9 mm	0.154 in	3.4 A 4.7 A	N and P-Channel	MOSFET (Metal Oxide)	50 mOhm	2 W	740 pF	55 V	1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IRF734 Series

The IR MOSFET family ofpower MOSFETsutilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters,SMPS,lighting, load switches as well as battery powered applications.

Documents

Technical documentation and resources