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IRF7343TRPBF - null

IRF7343TRPBF

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Infineon Technologies

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 55 V, 55 V, 4.7 A, 4.7 A, 0.043 OHM

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IRF7343TRPBF - null

IRF7343TRPBF

Active
Infineon Technologies

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 55 V, 55 V, 4.7 A, 4.7 A, 0.043 OHM

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF7343TRPBF
ConfigurationN and P-Channel
Current - Continuous Drain (Id) @ 25°C3.4 A, 4.7 A
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds [Max]740 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power - Max [Max]2 W
Rds On (Max) @ Id, Vgs50 mOhm
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.13
10$ 0.92
100$ 0.72
500$ 0.61
1000$ 0.50
2000$ 0.47
Digi-Reel® 1$ 1.13
10$ 0.92
100$ 0.72
500$ 0.61
1000$ 0.50
2000$ 0.47
Tape & Reel (TR) 4000$ 0.47
8000$ 0.44
12000$ 0.42

Description

General part information

IRF734 Series

The IRF7343TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.