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DMN63D1LT-13 - SOT-523

DMN63D1LT-13

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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DMN63D1LT-13 - SOT-523

DMN63D1LT-13

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN63D1LT-13
Current - Continuous Drain (Id) @ 25°C320 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]392 nC
Input Capacitance (Ciss) (Max) @ Vds30 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-523
Power Dissipation (Max)330 mW
Rds On (Max) @ Id, Vgs2 Ohm
Supplier Device PackageSOT-523
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.51
10$ 0.39
100$ 0.24
500$ 0.22
1000$ 0.15
2000$ 0.14
5000$ 0.13
Digi-Reel® 1$ 0.51
10$ 0.39
100$ 0.24
500$ 0.22
1000$ 0.15
2000$ 0.14
5000$ 0.13
Tape & Reel (TR) 10000$ 0.12
30000$ 0.12
50000$ 0.11

Description

General part information

DMN63D1LDW Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.