Technical Specifications
Parameters and characteristics for this part
| Specification | DMN63D1L-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 380 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 10 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 0.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 30 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Rds On (Max) @ Id, Vgs | 2 Ohm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
DMN63D1LDW Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources
