DMN63D1LDW Series

N-Channel Enhancement Mode Field Effect Transistor

Catalog

N-Channel Enhancement Mode Field Effect Transistor

Part	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max)	Power - Max [Max]	Configuration	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]
Diodes Inc DMN63D1LT-13	MOSFET (Metal Oxide)	60 V	320 mA	10 V	5 V	20 V	N-Channel	2.5 V	392 nC	SOT-523	-55 °C	150 °C	SOT-523	2 Ohm	30 pF	Surface Mount	330 mW
Diodes Inc DMN63D1LV-13	MOSFET (Metal Oxide)	60 V	550 mA					2.5 V	0.392 nC	SOT-563	-55 °C	150 °C	SOT-563 SOT-666	2 Ohm	30 pF	Surface Mount		940 mW	2 N-Channel (Dual)
Diodes Inc DMN63D1LW-7	MOSFET (Metal Oxide)	60 V	380 mA	10 V	5 V	20 V	N-Channel	2.5 V		SOT-323	-55 °C	150 °C	SC-70 SOT-323	2 Ohm	30 pF	Surface Mount	310 mW			0.3 nC
Diodes Inc DMN63D1LDW-13	MOSFET (Metal Oxide)	60 V	250 mA					2.5 V	0.3 nC	SOT-363	-55 °C	150 °C	6-TSSOP SC-88 SOT-363	2 Ohm	30 pF	Surface Mount		310 mW	2 N-Channel (Dual)
Diodes Inc DMN63D8LW-13	MOSFET (Metal Oxide)	30 V	380 mA	2.5 V	10 V	20 V	N-Channel		0.9 nC	SOT-323	-55 °C	150 °C	SC-70 SOT-323	2.8 Ohm	23.2 pF	Surface Mount					1.5 V	300 mW
Diodes Inc DMN63D1LT-7	MOSFET (Metal Oxide)	60 V	320 mA	10 V	5 V	20 V	N-Channel	2.5 V	392 nC	SOT-523	-55 °C	150 °C	SOT-523	2 Ohm	30 pF	Surface Mount	330 mW
Diodes Inc DMN63D1LV-7	MOSFET (Metal Oxide)	60 V	550 mA					2.5 V	0.392 nC	SOT-563	-55 °C	150 °C	SOT-563 SOT-666	2 Ohm	30 pF	Surface Mount		940 mW	2 N-Channel (Dual)
Diodes Inc DMN63D1L-7	MOSFET (Metal Oxide)	60 V	380 mA	10 V	5 V	20 V	N-Channel	2.5 V		SOT-23-3	-55 °C	150 °C	SC-59 SOT-23-3 TO-236-3	2 Ohm	30 pF	Surface Mount				0.3 nC
Diodes Inc DMN63D8LW-7	MOSFET (Metal Oxide)	30 V	380 mA	2.5 V	10 V	20 V	N-Channel		0.9 nC	SOT-323	-55 °C	150 °C	SC-70 SOT-323	2.8 Ohm	23.2 pF	Surface Mount					1.5 V	300 mW
Diodes Inc DMN63D0LT-7

Catalog

N-Channel Enhancement Mode Field Effect Transistor

Key Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• ESD Protected Gate

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.