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DMN63D1LV-13 - Package Image for SOT563

DMN63D1LV-13

Active
Diodes Inc

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN63D1LV-13 - Package Image for SOT563

DMN63D1LV-13

Active
Diodes Inc

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN63D1LV-13
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C550 mA
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs [Max]0.392 nC
Input Capacitance (Ciss) (Max) @ Vds30 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-666, SOT-563
Power - Max [Max]940 mW
Rds On (Max) @ Id, Vgs2 Ohm
Supplier Device PackageSOT-563
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.06
20000$ 0.06
30000$ 0.06
50000$ 0.05
70000$ 0.05
100000$ 0.05

Description

General part information

DMN63D1LDW Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.