DMN63D1LV-13
ActiveDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D1LV-13
ActiveDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMN63D1LV-13
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN63D1LV-13 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Ta) | 550 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Max) | 0.392 nC |
| Input Capacitance (Ciss) (Max) | 30 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-563, SOT-666 |
| Package Name | SOT-563 |
| Power - Max | 940 mW |
| Rds On (Max) | 2 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
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Documents
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