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DMN63D8LW-13 - Package Image for SOT323

DMN63D8LW-13

Active
Diodes Inc

POWER MOSFET, N CHANNEL, 30 V, 380 MA, 2.8 OHM, SOT-323, SURFACE MOUNT

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DMN63D8LW-13 - Package Image for SOT323

DMN63D8LW-13

Active
Diodes Inc

POWER MOSFET, N CHANNEL, 30 V, 380 MA, 2.8 OHM, SOT-323, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN63D8LW-13
Current - Continuous Drain (Id) @ 25°C380 mA
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]0.9 nC
Input Capacitance (Ciss) (Max) @ Vds23.2 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-70, SOT-323
Power Dissipation (Max) [Max]300 mW
Rds On (Max) @ Id, Vgs2.8 Ohm
Supplier Device PackageSOT-323
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.23
10$ 0.16
100$ 0.08
500$ 0.06
1000$ 0.04
2000$ 0.04
5000$ 0.04
Digi-Reel® 1$ 0.23
10$ 0.16
100$ 0.08
500$ 0.06
1000$ 0.04
2000$ 0.04
5000$ 0.04
Tape & Reel (TR) 10000$ 0.03
30000$ 0.03
50000$ 0.03
100000$ 0.02
250000$ 0.02

Description

General part information

DMN63D1LDW Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.