IAUC60N04S6N050HATMA1

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Infineon Technologies

MOSFET, N-CH, 40V, 60A, TDSON ROHS COMPLIANT: YES

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Infineon Technologies

MOSFET, N-CH, 40V, 60A, TDSON ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IAUC60N04S6N050HATMA1

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	17 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1027 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max	52 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	PG-TDSON-8-57
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Grade	Mounting Type	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Qualification	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [x]	Rds On (Max) @ Id, Vgs	FET Feature	Power - Max	Gate Charge (Qg) (Max) @ Vgs	Configuration	Power - Max [Max]
Infineon Technologies IAUC60N04S6N044ATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)	20 V	-55 °C	175 ░C	18 nC	3 V	40 V	8-PowerTDFN	42 W	PG-TDSON-8	1042 pF	60 A	AEC-Q101	N-Channel
Infineon Technologies IAUC60N04S6L039ATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)	16 V	-55 °C	175 ░C		2 V	40 V	8-PowerTDFN	42 W	PG-TDSON-8		60 A	AEC-Q101	N-Channel	1179 pF	4.5 V 10 V	20 nC	4.02 mOhm
Infineon Technologies IAUC60N04S6L045HATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)		-55 °C	175 ░C		2 V	40 V	8-PowerVDFN		PG-TDSON-8-57	1136 pF	60 A	AEC-Q101					4.5 mOhm	Logic Level Gate	52 W	19 nC	2 N-Channel (Half Bridge)
Infineon Technologies IAUC60N04S6N050HATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)		-55 °C	175 ░C		3 V	40 V	8-PowerVDFN		PG-TDSON-8-57	1027 pF	60 A	AEC-Q101					5 mOhm		52 W	17 nC	2 N-Channel (Half Bridge)
Infineon Technologies IAUC60N04S6N031HATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)		-55 °C	175 ░C	30 nC	3 V	40 V	8-PowerVDFN		PG-TDSON-8-56	1922 pF	60 A	AEC-Q101					3.1 mOhm				2 N-Channel (Half Bridge)	75 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 40V 60A (Tj) 52W (Tc) Surface Mount PG-TDSON-8-57

Technical documentation and resources