IAUC60N04S6L039ATMA1

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Infineon Technologies

IAUC60N04S6L039 IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 3.9 MΩ MAX, SSO8 (5X6), OPTIMOS™-6 WITH SUPERIOR SWITCHING PERFORMANCE AND EMI BEHAVIOR.

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DocumentsTechnical Data Sheet EN Datasheet

IAUC60N04S6L039ATMA1

Active

Infineon Technologies

IAUC60N04S6L039 IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 3.9 MΩ MAX, SSO8 (5X6), OPTIMOS™-6 WITH SUPERIOR SWITCHING PERFORMANCE AND EMI BEHAVIOR.

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DocumentsTechnical Data Sheet EN Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IAUC60N04S6L039ATMA1

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	1179 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	42 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.02 mOhm
Supplier Device Package	PG-TDSON-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2 V

IAUC60 Series

Part	Grade	Mounting Type	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Qualification	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [x]	Rds On (Max) @ Id, Vgs	FET Feature	Power - Max	Gate Charge (Qg) (Max) @ Vgs	Configuration	Power - Max [Max]
Infineon Technologies IAUC60N04S6N044ATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)	20 V	-55 °C	175 ░C	18 nC	3 V	40 V	8-PowerTDFN	42 W	PG-TDSON-8	1042 pF	60 A	AEC-Q101	N-Channel
Infineon Technologies IAUC60N04S6L039ATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)	16 V	-55 °C	175 ░C		2 V	40 V	8-PowerTDFN	42 W	PG-TDSON-8		60 A	AEC-Q101	N-Channel	1179 pF	4.5 V 10 V	20 nC	4.02 mOhm
Infineon Technologies IAUC60N04S6L045HATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)		-55 °C	175 ░C		2 V	40 V	8-PowerVDFN		PG-TDSON-8-57	1136 pF	60 A	AEC-Q101					4.5 mOhm	Logic Level Gate	52 W	19 nC	2 N-Channel (Half Bridge)
Infineon Technologies IAUC60N04S6N050HATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)		-55 °C	175 ░C		3 V	40 V	8-PowerVDFN		PG-TDSON-8-57	1027 pF	60 A	AEC-Q101					5 mOhm		52 W	17 nC	2 N-Channel (Half Bridge)
Infineon Technologies IAUC60N04S6N031HATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)		-55 °C	175 ░C	30 nC	3 V	40 V	8-PowerVDFN		PG-TDSON-8-56	1922 pF	60 A	AEC-Q101					3.1 mOhm				2 N-Channel (Half Bridge)	75 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.34
		10	$ 0.85
		100	$ 0.56
		500	$ 0.44
		1000	$ 0.40
		2000	$ 0.37
	Digi-Reel®	1	$ 1.34
		10	$ 0.85
		100	$ 0.56
		500	$ 0.44
		1000	$ 0.40
		2000	$ 0.37
	Tape & Reel (TR)	5000	$ 0.33
		10000	$ 0.31

Description

General part information

IAUC60 Series

Infineon introduces its latest OptiMOS™6 40V power MOS technology in the 5x6mm² SSO8 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products (RDSon_max from 0.8mΩ to 4.4mΩ address the whole applications range from low-power e.g. Body applications to high-power e.g. EPS) which enables the the customer to find the best product fit in the their applications. All of this enables the Best-in-Class product FOM (RDSon x Qg) and performance on the market. The new SSO8 product offers 120A continuous current ratings, which is >25% higher than the standard DPAK at almost half of its footprint area. Additionally, the new generation of the SSO8 package enables superior switching performance and EMI behavior due to very low package inductance (≈4x lower package inductivity vs traditional packages e.g. DPAK, D²PAK) by using the new copper-clip intercontact technology.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet