IAUC60 Series

Catalog

IAUC60N04S6N044 IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 4.4 MΩ MAX, SSO8 (5X6), OPTIMOS™-6, IDEAL FOR AUTOMOTIVE APPLICATIONS.

Part	Grade	Mounting Type	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Qualification	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [x]	Rds On (Max) @ Id, Vgs	FET Feature	Power - Max	Gate Charge (Qg) (Max) @ Vgs	Configuration	Power - Max [Max]
Infineon Technologies IAUC60N04S6N044ATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)	20 V	-55 °C	175 ░C	18 nC	3 V	40 V	8-PowerTDFN	42 W	PG-TDSON-8	1042 pF	60 A	AEC-Q101	N-Channel
Infineon Technologies IAUC60N04S6L039ATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)	16 V	-55 °C	175 ░C		2 V	40 V	8-PowerTDFN	42 W	PG-TDSON-8		60 A	AEC-Q101	N-Channel	1179 pF	4.5 V 10 V	20 nC	4.02 mOhm
Infineon Technologies IAUC60N04S6L045HATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)		-55 °C	175 ░C		2 V	40 V	8-PowerVDFN		PG-TDSON-8-57	1136 pF	60 A	AEC-Q101					4.5 mOhm	Logic Level Gate	52 W	19 nC	2 N-Channel (Half Bridge)
Infineon Technologies IAUC60N04S6N050HATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)		-55 °C	175 ░C		3 V	40 V	8-PowerVDFN		PG-TDSON-8-57	1027 pF	60 A	AEC-Q101					5 mOhm		52 W	17 nC	2 N-Channel (Half Bridge)
Infineon Technologies IAUC60N04S6N031HATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)		-55 °C	175 ░C	30 nC	3 V	40 V	8-PowerVDFN		PG-TDSON-8-56	1922 pF	60 A	AEC-Q101					3.1 mOhm				2 N-Channel (Half Bridge)	75 W