IAUC60N04S6N031HATMA1

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Infineon Technologies

INFINEON’S IAUC60N04S6N031H WITH OPTIMOS6, 3.0-7.0 MΩ RDS(ON), 60A CURRENT RATING, REDUCES PCB AREA FOR BRIDGE APPLICATIONS. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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IAUC60N04S6N031HATMA1

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Infineon Technologies

INFINEON’S IAUC60N04S6N031H WITH OPTIMOS6, 3.0-7.0 MΩ RDS(ON), 60A CURRENT RATING, REDUCES PCB AREA FOR BRIDGE APPLICATIONS. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IAUC60N04S6N031HATMA1

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs [Max]	30 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1922 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	75 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	3.1 mOhm
Supplier Device Package	PG-TDSON-8-56
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

IAUC60 Series

Part	Grade	Mounting Type	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Qualification	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [x]	Rds On (Max) @ Id, Vgs	FET Feature	Power - Max	Gate Charge (Qg) (Max) @ Vgs	Configuration	Power - Max [Max]
Infineon Technologies IAUC60N04S6N044ATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)	20 V	-55 °C	175 ░C	18 nC	3 V	40 V	8-PowerTDFN	42 W	PG-TDSON-8	1042 pF	60 A	AEC-Q101	N-Channel
Infineon Technologies IAUC60N04S6L039ATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)	16 V	-55 °C	175 ░C		2 V	40 V	8-PowerTDFN	42 W	PG-TDSON-8		60 A	AEC-Q101	N-Channel	1179 pF	4.5 V 10 V	20 nC	4.02 mOhm
Infineon Technologies IAUC60N04S6L045HATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)		-55 °C	175 ░C		2 V	40 V	8-PowerVDFN		PG-TDSON-8-57	1136 pF	60 A	AEC-Q101					4.5 mOhm	Logic Level Gate	52 W	19 nC	2 N-Channel (Half Bridge)
Infineon Technologies IAUC60N04S6N050HATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)		-55 °C	175 ░C		3 V	40 V	8-PowerVDFN		PG-TDSON-8-57	1027 pF	60 A	AEC-Q101					5 mOhm		52 W	17 nC	2 N-Channel (Half Bridge)
Infineon Technologies IAUC60N04S6N031HATMA1	Automotive	Surface Mount	MOSFET (Metal Oxide)		-55 °C	175 ░C	30 nC	3 V	40 V	8-PowerVDFN		PG-TDSON-8-56	1922 pF	60 A	AEC-Q101					3.1 mOhm				2 N-Channel (Half Bridge)	75 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.57
		10	$ 1.66
		100	$ 1.14
		500	$ 0.91
		1000	$ 0.84
		2000	$ 0.78
	Digi-Reel®	1	$ 2.57
		10	$ 1.66
		100	$ 1.14
		500	$ 0.91
		1000	$ 0.84
		2000	$ 0.78
	Tape & Reel (TR)	5000	$ 0.76
Newark	Each (Supplied on Cut Tape)	1	$ 1.76
		10	$ 1.27
		25	$ 1.16
		50	$ 1.05
		100	$ 0.94
		250	$ 0.88
		500	$ 0.83
		1000	$ 0.74

Description

General part information

IAUC60 Series

The dual SSO8 5x6 mm2package is perfectly suitable for single loads. For bridge applications the routing with a dual MOSFET is complicated and requires a large PCB area. Additionally, current rating in the dual SSO8 packages are limited to 20A. Using the integrated half-bridge, the PCB area is sizably reduced, as it provides enhanced routing for bridge applications. The newly designed half-bridge is based on the optimized OptiMOS™6 technology. The portfolio provides a wide RDS(ON) range from 3.0 mΩ to 7.0 mΩ and increased datasheet current rating of 60A.

Documents

Technical documentation and resources