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IAUC60N04S6L045HATMA1 - Infineon Technologies AG-IAUC60N04S6L045HATMA1 MOSFETs Trans MOSFET N-CH 40V 80A  8-Pin TDSON EP T/R Automotive AEC-Q101

IAUC60N04S6L045HATMA1

Active
Infineon Technologies

IAUC60N04S6L045H IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 4.5 MΩ MAX, PG-TDSON-8, OPTIMOS™ 6 WITH INTEGRATED HALF-BRIDGE SSO8 (5X6) FOR OPTIMIZED B6 APPS.

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IAUC60N04S6L045HATMA1 - Infineon Technologies AG-IAUC60N04S6L045HATMA1 MOSFETs Trans MOSFET N-CH 40V 80A  8-Pin TDSON EP T/R Automotive AEC-Q101

IAUC60N04S6L045HATMA1

Active
Infineon Technologies

IAUC60N04S6L045H IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 4.5 MΩ MAX, PG-TDSON-8, OPTIMOS™ 6 WITH INTEGRATED HALF-BRIDGE SSO8 (5X6) FOR OPTIMIZED B6 APPS.

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Technical Specifications

Parameters and characteristics for this part

SpecificationIAUC60N04S6L045HATMA1
Configuration2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C60 A
Drain to Source Voltage (Vdss)40 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs19 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1136 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power - Max52 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs4.5 mOhm
Supplier Device PackagePG-TDSON-8-57
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 1.38
10$ 1.02
50$ 0.95
100$ 0.69
200$ 0.67
DigikeyCut Tape (CT) 1$ 2.19
10$ 1.40
100$ 0.95
500$ 0.76
1000$ 0.70
2000$ 0.65
Digi-Reel® 1$ 2.19
10$ 1.40
100$ 0.95
500$ 0.76
1000$ 0.70
2000$ 0.65
Tape & Reel (TR) 5000$ 0.61
LCSCPiece 1$ 4.19
10$ 3.64
30$ 3.31
100$ 2.97
500$ 2.82
1000$ 2.75
NewarkEach (Supplied on Cut Tape) 1$ 1.57
10$ 1.15
25$ 1.02
50$ 0.89
100$ 0.76
250$ 0.68
500$ 0.61
1000$ 0.54

Description

General part information

IAUC60 Series

The dual SSO8 5x6 mm2package is perfectly suitable for single loads. For bridge applications the routing with a dual MOSFET is complicated and requires a large PCB area. Additionally, current rating in the dual SSO8 packages are limited to 20A. Using the integrated half-bridge, the PCB area is sizably reduced, as it provides enhanced routing for bridge applications. The newly designed half-bridge is based on the optimized OptiMOS™6 technology. The portfolio provides a wide RDS(ON) range from 3.0 mΩ to 7.0 mΩ and increased datasheet current rating of 60A.

Documents

Technical documentation and resources