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STW20NM60 - TO-247-3 HiP

STW20NM60

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STMicroelectronics

POWER MOSFET, N CHANNEL, 20 A, 600 V, 0.25 OHM, 10 V, 4 V ROHS COMPLIANT: YES

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DocumentsAN4250+17
STW20NM60 - TO-247-3 HiP

STW20NM60

Active
STMicroelectronics

POWER MOSFET, N CHANNEL, 20 A, 600 V, 0.25 OHM, 10 V, 4 V ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsAN4250+17

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW20NM60
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs54 nC
Input Capacitance (Ciss) (Max) @ Vds1500 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-247-3
Power Dissipation (Max)192 W
Rds On (Max) @ Id, Vgs290 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 6.12
30$ 4.85
120$ 4.16
510$ 3.70
1020$ 3.16
2010$ 2.98
NewarkEach 1$ 7.30
10$ 6.30
25$ 4.74
60$ 4.45
120$ 4.15
270$ 3.74

Description

General part information

STW20NK50Z Series

The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.